1.2 kV 4H‐SiC planar power MOSFETs with a low‐K dielectric in central gate

Abstract

A 1.2 kV 4H-SiC planar power MOSFET with a low-K dielectric in central gate (LK-MOS) is proposed in this paper. The LK-MOS features a P+ shielding region and a thick low-K dielectric layer under the central gate. The insulation layer capacitance is reduced by the thick low-K dielectric, while the depletion layer capacitance is decreased due to the reduced gate-to-drain overlap. The LK-MOS is demonstrated to have 97.8%, 70.6%, and 52.2% lower HF-FOM (Ron × Cgd), and 98.9%, 97.4%, and 69.4% lower HF-FOM (Ron × Qgd), when compared with that of the conventional MOSFET (C-MOS), Buffered-Gate MOSFET (BG-MOS) and Thick Central Oxide MOSFET (TCOX-MOS), respectively. Besides, the LK-MOS can also have 16.8%, 5.9% lower Cgs, and 19.9%, 12.4% lower Qgs compared with that of BG-MOS and TCOX-MOS.