Abstract
In this paper, a 3.3 kV SiC hybrid-channel SiC power MOSFET is analysed and compared with conventional planar SiC power MOSFET structures. Specific on-resistance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{R}_{\mathbf{ON,SP}})$</tex> , breakdown voltage (BV), and threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathbf{V}_{\mathbf{th}})$</tex> were extracted using numerical simulations. It has been shown that assuming good quality side-wells and trench bottom surfaces, the proposed device can outperform the state of the art and offer a significant improvement in the device's on-state performance without compromising the off-state of switching behaviour. Therefore, the additional fabrication complexity costs associated with the trench gate structure could still be justified at this voltage rating, given the device performance improvement performance.
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