Abstract
A route for the formation of a ZnO bicrystal film using the features of the magnetron sputtering method and the orienting action of the rhombohedral sapphire plane is proposed. It is shown that, when two deposition modes with with growth rates of ~ 2 and ~ 16 nm/s are used consistently, a bicrystalline ZnO film with a bottom (110)-oriented sublayer and a top (002)-oriented one is formed. Recrystallization annealing of the film at 1000°C for 10 h does not affect the top (002)-oriented layer and leads to relaxation of stresses in the bottom (110)-oriented layer.
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