Abstract
Results of investigation of highly enthalpy low-temperature nitrogen plasma flow effect are generated by DC plasmatron on morphology, electric and UV-photoconductive properties of ZnO films on sapphire are given. It has been shown that the resistance of the ZnO films after treatment with nitrogen plasma grows 10(4) times and they exhibit a distinct response to ultraviolet illumination. UV current photosensitivity and current contrast of samples at 6 V had values on the order of 3.6 x 10-5 A/W and 16, respectively. Photocurrent rise and fall time ~ 0.45 s.
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