Abstract
surface phase were modeled using first principles approach. A new atomic model for α-c(4×4)-B structure was proposed. Total energy calculations showed that our atomic model is the most energetically favorable structure. The calculated spatial distribution of the electronic density for occupied states above Si(100)α-c(4×4)-B surface is in good agreement with known scanning tunneling microscopy images
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Schedule a callMore From: Bulletin of the Saint Petersburg State Institute of Technology (Technical University)
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