Abstract
Nanoscale α-SiC(0001) on β-SiC(111) heterostructures on Si (111) substrates fabricated by ultralow-pressure chemical vapor deposition are demonstrated. The intentional formation of the α-β structure was achieved by adjusting the SiH4 to C2H4 flux ratios to carbon rich conditions and by controlling the diffusion length. The developed method allows the formation of heteropolytypic structures with a controlled thickness of the intermediate cubic β-SiC layer.
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