Abstract
The results of experimental and theoretical investigations dedicated to the uniaxial stress induced tuning of terahertz stimulated terahertz emission from silicon doped with bismuth under optical intracenter excitation. The frequency tuning of two emission lines from bismuth donor in silicon under uniaxial stress along [001] has been demonstrated in the experiments. The crosssections of stimulated Raman scattering for uniaxially stressed silicon doped with bismuth donors have been calculated.
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