Abstract
The results of experimental and theoretical investigations of terahertz-emission-spectrum tuning by means of uniaxial stress of a silicon crystal doped with shallow bismuth donors are presented for the case of intracenter optical excitation. The frequency tuning of two emission lines of the bismuth donor is shown for the case of uniaxial strain along the [001] crystallographic direction. The cross sections of stimulated Raman scattering for uniaxially stressed bismuth-doped silicon are calculated.
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