Abstract
The suitability of ion-implanted bismuth donors in silicon as a high-quality platform for quantum technologies is demonstrated in article number 1800038 by Steven Clowes and co-workers. The cover image represents both the bismuth ion beam and the active bismuth donors incorporated within a silicon lattice. Additionally, an artistic depiction of resonant donor bound exciton photoexcitation is included as this is the foremost technique used in the study.
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