Abstract
AbstractIntersubband transitions in n-type InGaAs/AlGaAs multiple quantum wells were studied as a function of 1.0 to 5.0 MRad γ-ray irradiation dose using the optical absorption technique. The spectra were recorded at both 295 and 77K. The results show that the total integrated area of the intersubband transition is decreased as the irradiation dose is increased. This could be explained as follows: The secondary electrons generated from the γ-ray irradiation cause lattice damages where traps and point defects are created. Some of the electrons in the quantum wells are trapped by these defects causing the two dimensional electron gas (2DEG) density to decrease. The reduction of the 2DEG density thus leads to the reduction of the total integrated area of the intersubband transitions.
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