Abstract
In this work, handling of sapphire substrate for LED by using an electrostatic chuck was studied. The electrostatic chuck consisted of alumina dielectric, which was doped with 1.2 wt% <TEX>$TiO_2$</TEX>. As the volume resistivity of alumina dielectric was decreased, the electrostatic force was increased by Johnsen-Rahbek effect. The narrower width and gap size of electrode led to the stronger electrostatic force. When alumina dielectric with <TEX>$3.20{\times}10^{11}{\Omega}{\cdot}cm$</TEX> resistivity and 3 mm width/1.5 mm gap sized electrode was used, the strongest electrostatic force in this work was obtained, which value reached to ~14.46 gf/<TEX>$cm^2$</TEX> at 2.5 kV for 4-inch sapphire substrate. This results show that alumina electrostatic chuck with low resistivity and fine electrode pattern is suitable for handling of sapphire substrate for LED.
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