Abstract
The temperature characteristics of ring lasers with a diameter of 480 μm of an original design with an active region based on 10 layers of InAs/InGaAs/GaAs quantum dots are studied. The lasers demonstrated a low threshold current density (200 A/cm2 at 20°C CW), the characteristic temperature of the threshold current in the range of 20–100°C was 68 K, the maximum lasing temperature was as high as 130oC. These values are only slightly inferior to the parameters of the edge-emitting lasers fabricated from the same epitaxial wafer.
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