Abstract
We present the results on the selective-area growth of GaN nanowires using a molecular beam epitaxy technique on patterned SiOx/Si substrates without any seed layers. The patterned SiOx/Si substrates were prepared by the simple microlens photolithography method. The influence of the substrate temperature on the morphological properties of GaN nanowires was investigated. The optimal growth parameters for the selective-area growth of GaN nanowires were experimentally determined.
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