Abstract
The electrophysical and photoluminescent characteristics as well as the surface morphology of GaAs epitaxial films grown by molecular beam epitaxy on GaAs (110) substrates are studied. Silicon-doped epitaxial layers were grown in a wide range of growth temperatures from 410 to 680 °C and a ratio of arsenic and gallium fluxes from 14 to 84. The ranges of growth conditions resulting in the smoothest epitaxial films surface were estimated by atomic force microscopy. The occurrence of point defects "a Si atom in a Ga site" and "a Si atom in a As site" as well as the formation of arsenic and gallium vacancies were interpreted by analyzing the photoluminescence spectra of the grown samples.
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