Abstract
The electrophysical and phosphorescence characteristics, as well as the surface morphology, of GaAs films grown by molecular beam epitaxy on GaAs substrates with the (110) crystallographic orientation are studied. The silicon-doped epitaxial layers were grown at temperatures from 410 to 680°C with arsenic-to-gallium flux ratios from 14 to 84. The ranges of the growth conditions for obtaining the smoothest epitaxial film surface are determined by atomic force microscopy. The behavior of silicon atoms in GaAs is interpreted using analysis of the photoluminescence spectra of the grown samples taking into account that silicon atoms occupy Ga or As sites, i.e., taking into account the appearance of SiGa and SiAs point defects, as well as of arsenic and gallium vacancies VAs and VGa.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
