β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

Abstract

β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si (GaOISi) substrate fabricated by ion-cutting process. Enhancement (E)- and depletion (D)-mode β-Ga2O3 transistors are realized on by varying the channel thickness ( T ch). E-mode GaOISi transistor with a T ch of 15 nm achieves a high threshold voltage V TH of ~ 8 V. With the same T increase, GaOISi transistors demonstrate more stable ON-current I ON and OFF-current I OFF performance compared to the reported devices on bulk Ga2O3 wafer. Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C, respectively.