Abstract
One of the main disadvantages of conventional silicon-on-insulator (SOI) materials is that the buried oxide layer has poor thermal conductivity and so the self-heating effect becomes a problem. In order to mitigate this effect, the single crystalline Si/SiO/sub x/N/sub y//Si substrate structures were successfully formed using Si/SiO/sub x/N/sub y/ direct wafer bonding and the hydrogen induced layer transfer method. Cross-sectional high-resolution transmission electron microscopy (HRTEM) and spreading resistance (SPR) reveal that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
