Abstract
We proposed that the grain growth observed in electrodeposited Cu films at room temperature is caused by hydrogeninduced superabundant vacancyhydrogen clusters. In this study, the relation between grain growth and hydrogen behavior in the electrodeposited Cu films was investigated using different types of plating baths. The Cu films were electrodeposited from an acid sulfate bath, an acid sulfate bath containing chloride ion, polyethylene glycol, and bis(3sulfopropyl)disulfide (additivecontaining bath), a pyrophosphate bath, and a chloride bath containing citric acid. Thermal desorption spectroscopy revealed that extremely high concentration of hydrogen is contained in the Cu films deposited from the additivecontaining bath and the chloride bath. The roomtemperature grain growth was observed in these Cu films with passage of time after deposition, concurrently with hydrogen desorption. Such grain growths were not observed in the Cu films with low hydrogen content deposited from the acid sulfate bath and the pyrophosphate bath. The changes in crystal orientation and internal stress during the grain growth of the Cu films differed between the additivecontaining bath and the chloride bath. These results suggest that the roomtemperature grain growth was induced by the codeposited hydrogen in films. [doi:10.2320/jinstmet.JC201406]
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call