Abstract
Halide perovskites (HP) have garnered significant attention as highly prospective electronic materials for the development of advanced electronic devices, such as resistive random-access memory (RRAM) devices, artificial synapses, and logic operation. This review begins by providing a concise overview of the structural and optoelectronic properties of HP-based materials. Subsequently, it delves into the discussion of HP-based memristors, focusing on their remarkable switching characteristics and potential transport mechanisms. Furthermore, this review contains the recent advancements in the HP-based two-terminal memristors across four application domains: memory, logic gate, unclonable physical device, and neuromorphic computing devices. Lastly, the main challenges encountered in the implementing HP-based memristors are briefly discussed. This review provides an insightful guide for the HP-based memristor to keep pace with the forthcoming era of big data and artificial intelligence.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
