Abstract
The effects of artificial pinning centers (APCs) in ErBa2Cu3O7-δ films are discussed. The APC used for this research was BaZrO3 which was mixed into an ErBa2Cu3O7-δ ceramic target. The target was ablated and the films were grown on substrates with APCs. The X-ray diffraction patterns show that there were no other phases than ErBa2Cu3O7-δ and BaZrO3. Transmission electron microscopy (TEM) revealed that the BaZrO3 APSs grow along the c-axis of the films. The introduction of APCs decreases the surface resistance of the ErBa2Cu3O7-δ film and dramatically increases the critical current density (JC). Strong JC enhancement at the B¦¦ c-axis coincides with the growth direction of the APCs.
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