Abstract
Effects of artificial pinning centers (APCs) into ErBa2Cu3O7−δ films are discussed. The APCs used in this paper is BaZrO3 and Zn which are mixed into ErBa2Cu3O7−δ ceramic targets. The targets with various contents of APCs are ablated and films are grown on substrates with the APCs. X-ray diffraction patterns show there are no other phases than ErBa2Cu3O7−δ and APCs. Transmission electron microscopy (TEM) shows the BaZrO3 APSs grow along the c-axis of the films. The introduction of APCs decreases surface resistance (RS) of ErBa2Cu3O7−δ films and increases critical current density (JC) of the films. RS measurements revealed that the ErBa2Cu3O7−δ films with APCs showed a lower RS than that of the ErBa2Cu3O7−δ films without APCs.
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