Abstract
The impurity energy spectrum of non-doped bulk crystals of n-type GaAs, InAs, CdSnAs2, CdGeAs2 and CdTe, ZnO is investigated basing on the findings from the quantitative analysis of baric and temperature dependences of kinetic coefficients. It`s found that in the above-listed semiconductors the deep level donor center corresponds to the intrinsic defect of vacancy in the anion sublattice. The energy level positions relative to conduction band edge and the pressure coefficients of energy gaps between them and corresponded conduction band bottom are determined. The shift of deep donor center energy levels towards the depth of the conduction band is observed with a decrease in the forbidden band width in above-listed semiconductors.
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