About deep impurity centers in InAs

Abstract

AbstractSome characteristic parameters of charge carriers have been calculated for n‐InAs with a surplus donor concentration ∼1016 cm–3 and for p‐InAs with a surplus donor concentration ∼1016 cm–3 according to experimental data on hydrostatic pressure dependences of Hall coefficient RH and resistivity ρ at 300 K. It has been found that the pressure coefficients of energy gaps between the conduction‐band bottom and deep acceptor and resonance donor levels, located at a distance of ϵa = –0.13 eV below and at a distance of ϵd = 0.35 eV above the bottom of conduction band, respectively, are defined by a ‘motion’ of conduction band with the pressure. The energy of deep levels relative to absolute vacuum does not depend on pressure: pressure coefficients dϵa/dP ≈ dϵd/dP ≈ –95 meV/GPa. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)