Abstract
α-Ga2O3/α-Cr2O3 heterostructures with a corundum structure were obtained by chloride vapor phase epitaxy and magnetron sputtering. The structural, electrical conductive and photoelectrical properties of the obtained samples were studied. It was established that the α-Ga2O3/α-Cr2O3 heterostructures exhibits weak rectifying properties and in comparison with α-Ga2O3 films has a higher response speed when exposed to ultraviolet radiation.
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