Abstract
We report on characteristics of specially designed inductively-coupled-plasma chemical vapor deposition (ICP-CVD) system for top-emitting organic light emitting diodes (TOLEDs). Using high-density plasma on the order of <TEX>$10^{11}$</TEX> electrons/<TEX>$cm^3$</TEX> generated by linear-type antennas connected in parallel and specially designed substrate cooling system, a 100 nm-thick transparent <TEX>$SiN_{x}$</TEX> passivation layer was deposited on thin Mg-Ag cathode layer at substrate temperature below <TEX>$50\;^{\circ}C$</TEX> without a noticeable plasma damage. In addition, substrate-mask chucking system equipped with a mechanical mask aligner enabled us to pattern the <TEX>$SiN_x$</TEX> passivation layer without conventional lithography processes. Even at low substrate temperature, a <TEX>$SiN_x$</TEX> passivation layer prepared by ICP-CVD shows a good moisture resistance and transparency of <TEX>$5{\times}10^{-3}g/m^2/day$</TEX> and 92 %, respectively. This indicates that the ICP-CVD system is a promising methode to substitute conventional plasma enhanced CVD (PECVD) in thin film passivation process.
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