Abstract
The characteristics of a passivation layer grown by a specially designed catalyzer-enhanced chemical vapor deposition (CECVD) system for top-emitting organic light-emitting diodes (TOLEDs) were investigated. Using a tungsten catalyzer connected in series, a high-density passivation layer with high transmittance was deposited on TOLEDs at a substrate temperature of . Even at low substrate temperature, 150 nm thick passivation layer prepared by CECVD exhibited a low water vapor transmission rate of 2–. In addition, it was found that the transmittance of film at was significantly influenced by the hydrogen flow rate. Current density-voltage-luminescence results of TOLEDs passivated with a thick film indicated that the electrical and optical properties of TOLEDs were not affected by the high temperature tungsten catalyzer during the deposition. The lifetime to half initial luminance of a TOLED passivated with a thick layer was much longer than that of a nonpassivated reference sample. This shows that the CECVD is a promising plasma free thin-film passivation technique for high-performance TOLEDs and flexible displays.
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