Використання халькогенідних склоподібних напівпровідників для створення мікро- та нанорозмірних структур

Abstract

The results on the analysis of methods for the formation of nanoscale elements on thin films of chalcogenide glassy semiconductors and their application to create optical diffraction elements are presented. When creating micro- and nanoelements of optoelectronic devices, micro / nanoelectromechanical systems (MEMS/NEMS) and diffractive optical elements, chalcogenide glassy semiconductors (CGS) can be effectively used. The use of CGS is mainly based on their sensitivity to various types of radiation, which cause structural changes in them and transparency for infrared light. Numerous studies have been carried out aimed at studying the processes of formation of nanostructures on CGS films. A number of photoinduced changes are observed in CGS, which are associated with structural transformations, phase transitions, defect formation, and atom diffusion. It is of interest to determine the technologies for the formation of micro- and nanoscale structures on CGS films that can be used to create diffractive optical elements for optoelectronic devices. Increasing the resolution of recording media based on vitreous chalcogenide semiconductors can be achieved by choosing recording modes and glass compositions, in which the nonlinearity of the exposure characteristics of photosensitive material is most pronounced, as well as the introduction of noble metal nanoparticles for excitation of precious metals for excitation. A promising area of application of chalcogenide glassy semiconductors can be direct laser recording of diffractive optical elements at upgraded laser beam recorder of master disks. The unique properties of chalcogenide glassy semiconductors allow the formation of microrelief images without selective chemical etching due to the irradiation of thin films with rays of different polarization. Fig.: 8. Refs: 41 titles.