Abstract
Inorganic resists based on chalcogenide glassy semiconductor (CGS) films can be effectively used in the creation of micro- and nanoelements of optoelectronic devices, micro- and nanoelectromechanical systems, and diffractive optical elements. The use of these materials is based mainly on their sensitivity to different types of radiation, which causes phase and structural changes in CGS films, and transparency in the infrared range. A number of photoinduced changes are observed in CGS, which are associated with structural transformations, phase transitions, defect formation, and atomic diffusion. It is important to determine technologies for the formation of micro- and nanoscale structures on CGS films, which can be used in the creation of diffractive optical elements for optoelectronic devices. Increasing the resolution of recording media based on vitreous chalcogenide semiconductors can be achieved by choosing the recording modes and composition of glasses, in which the strongest nonlinearity of the exposure characteristics of photosensitive material, as well as the introduction into the structure of recording media nanoparticles of noble metals for excitation of plasmonic resonance.
Highlights
Lithography is one of the key technological processes in the production of semiconductor integrated circuits, storage devices, and precision devices for optics and micromechanics
Among these materials should be noted inorganic resist based on films of chalcogenide glassy semiconductors (CVS)
Inorganic resists based on CVS films can be effectively used in the creation of micro- and nanoelements of optoelectronic devices, micro- and nanoelectromechanical systems (MEMS/NEMS), and diffractive optical elements
Summary
Lithography is one of the key technological processes in the production of semiconductor integrated circuits, storage devices, and precision devices for optics and micromechanics. Inorganic resists based on CVS films can be effectively used in the creation of micro- and nanoelements of optoelectronic devices, micro- and nanoelectromechanical systems (MEMS/NEMS), and diffractive optical elements The use of these materials is based mainly on their sensitivity to different types of radiation, which cause phase and structural changes in CVS films, and transparency in the infrared range [4, 6–9]. It is shown that the resolution of an inorganic resist based on CVS is determined by the size of the structural units that form the matrix of films and is 1–2 nm [10, 13, 14] In this regard, CVS are promising materials for the formation of nanoscale structures on their surface and the creation of ultra-dense information recording devices [1]. Particular attention was paid to the choice of CVS that do not contain highly toxic elements, modes of their heat treatment and selective chemical etching [15]
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