Abstract
The role of EL2 defect in a formation of a photoresponse of an array of radial GaAs/AlGaAs nanowires (x=0.3) n-type grown by molecular beam epitaxy on a p-type silicon substrate was studied. A significant reduction in the recovery time of the photoresponse of nanowires was found in comparison with the bulk crystal during the transition of the EL2-center from the non-photoactive to the normal state.
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