Эпитаксиальный рост cульфида цинка методом молекулярного наслаивания на гибридных подложках SiC/Si

Abstract

In this work, we obtained epitaxial films of zinc sulfide on silicon by the ALD method. To avoid the interaction between silicon and zinc sulphide on the silicon surface, a high-quality buffer layer of silicon carbide ~ 100 nm thick was preliminarily synthesized by chemical substitution of atoms. The diffraction of high energy electrons showed that the ZnS layers are epitaxial. Using ellipsometric methods, it has been proved that the grown ZnS layers are transparent in the photon energy region up to 3 eV, which is of crucial importance for applications in optoelectronics.