Abstract
The paper presents the results of the synthesis of thin aluminum nitride films by reactive ion-plasma sputtering and the study of their properties with the aim of using as the protective coatings for the high-power AlxGa1-xAs/GaAs semiconductor laser heterostructures. EDS studies and ellipsometry showed that at a residual pressure in the chamber of the order of ~10-5 Torr, a layer of aluminum oxynitride is formed in the films. In this case, the film-substrate heterointerface can undergo oxidation. However, AlN films with a thickness of the order of 100 nm grown in a pure nitrogen medium with a residual pressure of ~10-7 Torr apparently do not contain oxygen, and can reliably prevent its penetration into the heterointerface region. Potentially, they can serve as effective protection for oxidation sensitive heterostructures.
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