Abstract
AbstractHigh-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al_2O_3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which revealed the high structural quality of thin zinc oxide layers. The surface morphology and specific features of UV photoluminescence of the ZnO/GaN/Al_2O_3 heterostructure have been analyzed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
