Abstract
Results of synthesis of multilayered nitrogen doped nanostructures, which consist of periodically located nitrogen-containing layers in monocrystalline CVD diamond, are presented. The possibility of creation of nitrogen doped layers with extremely abrupt interfaces, less than 1 nm, is demonstrated. Photoluminescence studies have shown that multilayered structures allow obtaining higher emission intensity of practically important NV– centers with spin coherence times close to homogeneously doped layers at the same nitrogen concentration.
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