Дефектная структура пленки α-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-, выращенной на m-грани подложки сапфира, по данным просвечивающей электронной микроскопии

Abstract

The results of a study by transmission electron microscopy of the structural state of α-Ga2O3 film with a thickness of about 1 micron, grown on the prismatic m-face sapphire by the method of chloride vapor phase epitaxy, are presented. The influence of the substrate orientation on the formation of the dislocation structure is discussed. Threading dislocations, including those with the Burgers vector 1/3<11-20> , and dislocation half-loops are revealed. The inclined propagation of dislocations and the formation of dislocation half-loops result in the reduction of the threading dislocation density near the surface.