Abstract
In thin ZrO2 (Y) / Ni films, with used of an atomic force microscope (AFM) probe, conductive ferromagnetic filaments of nanometer sizes, consisting of Ni atoms, are formed. Memristor structures based on such films, the upper electrode of which was the AFM probe, demonstrated bipolar-type resistive switching (RP) associated with the destruction and reduction of Ni filaments. The area where the conducting filament emerges on the surface of the ZrO2 (Y) film manifested itself in the magnetic force image as a single-domain ferromagnetic particle.
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