Abstract
A group-theoretical analysis of solid solutions of indium and gallium nitrides InxGa1-xN was carried out, and all the main symmetry groups were found for these solutions with the initial hexagonal structure. The thermodynamic potentials of the main phases with different compositions x are calculated using the density functional theory. It is shown that for small and large x, i.e. at 0 <x <0.2 and 0.8 <x <1, there is a large number of monoclinic phases Pm and P2_1, which are stable with respect to decomposition into InN and GaN at room temperature. In the range 0.2 <x <0.8, there are only two stable orthorhombic phases Cmc2_1 with compositions x = 1/3 and x = 2/3. All basic geometric and thermodynamic properties of various InxGa1-xN phases have been calculated. It was found that the stability of InxGa1-xN epitaxial films increases with growth on InN and decreases with growth on GaN.
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