Abstract
A new analytic theory is developed for asymptotic stage of self-catalyzed growth of III-V nanowires (NWs) by molecular beam epitaxy (MBE), where NWs collect all group III atoms deposited from vapor. The shadowing NW length is derived which corresponds for the full shadowing of the substrate surface in MBE. The NW length and radius are derived depending on the effective deposition thickness and MBE growth parameters. It is shown that the NW length increases, and their length decreases with decreasing the array pitch and increasing the V/III flux ratio.
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