Кинетика роста планарных нитевидных нанокристаллов

Abstract

A kinetic equation is obtained which describes the elongation rate of planar semiconductor nanowires growing via the vapor-liquid-solid mechanism in the substrate plane. Theoretical analysis of different regimes depending on the nanowire radius and epitaxial conditions shows that planar growth of nanowires can be limited by either the Gibbs-Thomson effect in a catalyst droplet (for small droplet size) or surface diffusion of adatoms (for larger nanowire radii. Diffusion-like dependence of the growth rate on the nanowire radius R has the form R^(-m), where the power exponent equal 1, 3/2 or 2 depending on the mechanism of surface diffusion transport.