Abstract
In this work, to determine the solubility of bismuth in TlInTe2 crystals by the methods of physicochemical analysis, we studied the phase diagram of TlInTe2 - Bi in the concentration range of 0-10 at.% Bi and studied the electrical and dielectric properties of (TlInTe2)1-x Bix solid solutions. Analyzing the obtained experimental data, we assume that bismuth atoms, penetrating into the TlInTe2 lattice, form interstitial solid solutions, occupying octahedral voids between thallium atoms in the crystallographic direction 001 (z = 0.5). The influence of bismuth impurities on the dielectric properties of TlInTe2 crystals is also observed, while forming barriers to the movement of thallium ions, bismuth impurities increase the temperature of the phase transition to the ion-conductive phase (Ti): in the crystallographic direction 001-69 K, and in the direction 110-87 K.
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