Abstract
The thermal droop of external quantum efficiency (EQE) at maximum in blue InGaN/GaN LEDs at j < 10 A/cm2 is caused by increasing losses related to non-radiative recombination due to carrier tunneling with the assistance of phonons and traps, enhancing by a temperature growth up to 400 K. When a p-n junction opens at j > 40 A/cm2, the EQE droop under direct current and at pulse mode is due to the losses associated with non-equilibrium filling of the states related to lateral alloy non-uniformities in quantum wells situated outside of the depletion region by delocalized carriers as well as the losses due to the interactions between delocalized carriers and extended defects.
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