Abstract
The effect of the gaseous medium composition on the electrically conductive properties of In2O3-Ga2O3 films obtained by chloride vapor phase epitaxy has been studied. In the temperature range of 100-550ºC the In2O3 -Ga2O3 films exhibit high sensitivity to H2, NH3 and CO possessing high-speed performance and low-base-resistance. A qualitative mechanism for the sensitivity of In2O3-Ga2O3 films to gases is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
