Зависимость скорости роста и структуры III-V нитевидных нанокристаллов от площади сбора адатомов на поверхности подложки

Abstract

A theoretical analysis is presented for the growth rate and structure of III-V nanowires depending on the collection area of group III adatoms on the substrate surface. An expression for the maximum possible nanowire vertical growth rate is obtained and different reasons are analyzed for its suppression in different technologies. It is shown that the maximum growth rate is proportional to the collection area and inversely proportional to the squared nanowire radius. It is demonstrated that self-catalyzed GaAs nanowires grow or shrink radially at large or small adatom collection areas, respectively, having the zincblende crystal phase in both cases. The wurtzite phase forms in GaAs nanowires growing only axially at the intermediate adatom collection areas.