Оптическое усиление в сильнолегированных структурах Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N : Si

Abstract

The gain characteristics of heavily doped AlxGa1-xN/AlN: Si structures with x = 0.65 and 0.74 under optical pumping by a pulsed Nd:YAG laser radiation with lambda= 266 nm have been experimentally studied at room temperature. The absolute values of the optical gains are (0.5–6)*10^3 сm-1 in the maximum of the luminescence spectrum at the excitation power density (8–600) kW/cm2. The obtained cross sections for the radiative and donor–acceptor recombination coincide with each other and exceed the 10^(-16) сm2.