Abstract
AbstractThe electron emission properties of submicron Si, GaAs, InSb, and InAs semiconductor particles and their multigrain structures have been investigated. The effect of the properties of nanoparticles on the field and secondary emissions has been established. A scanning electron microscopy-based method for measuring the secondary emission coefficient of semiconductors has been proposed. The effect of photoexcitation of the multigrain structure of submicron semiconductor particles on their secondary emission properties has been investigated by the vacuum triode method.
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