Abstract
The efficiency of transmission of high-frequency signals by a semiconductor-transmitting antenna made of Ge and Si single crystals on the surface of which a nonequilibrium electron-hole plasma is formed by laser diode radiation is experimentally investigated. The dependences of the amplitude of the emitted microwave signal in the range of 6 - 7.5 GHz on the laser power and the size of the irradiated area on the semiconductor transmitting vibratory antenna are obtained. It is shown that the efficiency of the useful signal transmission when forming a plasma antenna in Ge crystals can be increased by more than an order of magnitude.
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