Abstract
Interconnector technologies of a new generation involve use of ruthenium. The high cost of experimental study of sputtering and etching of trenches in Ru leads to the need to optimize it by modeling, requiring knowledge of the cross sections of elementary processes of interaction of plasma particles with Ru. In this work, the binary interatomic potentials of Ru-Ru and Ru-Si pairs, tested by molecular dynamics method, and the Ru-O one calculated using the multi reference configurational interaction MRCI/AV5Z were used to calculate the elastic scattering cross sections of the atomic pairs in the energy range typical for plasma etching chambers.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
