Abstract
In this work, the structure of the chaotic potential in heterocontacts of III-nitrides, caused by the electrostatic field of charged dislocations, is studied. Taking into account the spatial dispersion of the dielectric response of a two-dimensional electron gas, the amplitude and scale of the chaotic potential in the contact plane are determined. The dependence of the parameters of the chaotic potential on the surface states density and the concentration of dislocations is shown.
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