Abstract
Multicomponent solid solutions of AIIIBV are increasingly used in optoelectronics, photonics, and other fields of science and technology. These are AlGaInN-based emitters, InGaAsP-based receivers, etc. In addition, these materials are widely used as buffer and isomorphic layers in general-purpose nanoheterostructures. The main methods of their production are gas-phase methods, such as chloride-hydride, MOS-hydride epitaxy, MBE. The development of optimal technological modes of multicomponent layers and structures, as a rule, takes a lot of time and is quite expensive. In this paper, the author proposed a method for modeling processes based on the basic physical and chemical laws of the crystallization processes of materials and the properties of AIIIBV compounds. The analysis and prediction of the processes of obtaining four-component solid solutions In1–yGayAs1–xPx, isoperiodic with GaAs, three-component solid solutions GaAs0,8P0,2 and GaAs0,6P0,4 were performed. The calculated modes have been experimentally implemented and the materials corresponding to the current level of quality have been obtained.
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