Abstract
Using X-ray fluorescence and X-ray diffraction mapping, as well as scanning electron microscopy, the distribution of aluminum in the surface layer of the (AlxGa1-x) 2O3 crystal obtained by the Czochralski method using a sapphire seed was studied. It is shown that the distribution of aluminum correlates with the change in the physical broadening of the diffraction maxima of the system of planes (h00) of the crystal and is associated with the distance from the seeding zone.
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