Abstract

Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes have been fabricated. Test HBV diodes demonstrate capacitance-voltage characteristics with cosine shape at bias voltage up to two volts, increased capacitance ratio and low leakage current values.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call